Jong Choul Kim
13Patents
6h-index
15Co-inventors
52Inventor score
Filing activity: Apr 5, 1996 → Oct 28, 1999
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5827571A | Hot-wall CVD method for forming a ferroelectric film | Electricity | 45 | Expired |
| US5985757A | Method for fabricating semiconductor device | Electricity | 15 | Expired |
| US6338759B1 | Metal organic chemical vapor deposition apparatus and deposition method | Chemistry; Metallurgy | 14 | Expired |
| US5985738A | Method for forming field oxide of semiconductor device using wet and dry oxidation | Electricity | 8 | Expired |
| US6008143A | Metal organic chemical vapor deposition apparatus and deposition method | Chemistry; Metallurgy | 7 | Expired |
| US5948167A | Thin film deposition apparatus | Electricity | 6 | Expired |
| US5940719A | Method for forming element isolating film of semiconductor device | Electricity | 6 | Expired |
| US5719086A | Method for isolating elements of semiconductor device | Electricity | 4 | Expired |
| US6027985A | Method for forming element isolating film of semiconductor device | Electricity | 4 | Expired |
| US5837600A | Method for fabricating a semiconductor device | Electricity | 2 | Expired |
| US6107144A | Method for forming field oxide of semiconductor device and the semiconductor device | Electricity | 2 | Expired |
| US6013561A | Method for forming field oxide film of semiconductor device | Electricity | 1 | Expired |
| US6420241B2 | Method for forming an isolation region in a semiconductor device and resulting structure using a two step oxidation process | Electricity | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.