Thin film transistor substrate, manufacturing method thereof, liquid crystal display panel and liquid crystal display equipment
US5719408A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 21, 1997 |
| Grant date | Feb 17, 1998 |
| Priority date | — |
| Expiry date | Feb 21, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In a more preferred structure, the anodic oxidized film is used for all of the gate insulators, the dielectric films for the thin film capacitances and the interlayer insulation films for the intersections between the bus lines. The present invention also relates to a method of selectively forming an anodic oxidized film on an aluminum pattern. That is, in a case of forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, in the present invention, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .theta..gtoreq.110-20T (T: film thickness of the positive type photoresist).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.