Insulated gate type semiconductor device having built-in protection circuit
US5719420A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 25, 1996 |
| Grant date | Feb 17, 1998 |
| Priority date | — |
| Expiry date | Jul 25, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/601
Abstract
A semiconductor substrate is partitioned into a main IGBT region and a protection circuit region by a p-type well portion which is formed therebetween in contact with an emitter electrode and which acts as a cut-off region. Both a detection IGBT and protection circuit elements are formed within the protection circuit region. Since excessive carriers flowing from the main IGBT into the protection circuit region can efficiently be extracted through the p-type well portion, a highly reliable and high precision protection circuit built-in insulated gate semiconductor device is realized that can precisely detect any overcurrent, and operate without causing malfunction in the protection circuit and time delay.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.