Method of making high-speed, low-noise millimeterwave HEMT and pseudormorphic HEMT
US5721161A · kind A · utility
8Cited by
3References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 9, 1995 |
| Grant date | Feb 24, 1998 |
| Priority date | — |
| Expiry date | Nov 9, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/852
Abstract
An epitaxial structure and method of manufacture for a field-effect transistor capable of high-speed low-noise microwave, submillimeterwave and millimeterwave applications. Preferably, the epitaxial structure includes a donor layer and/or buffer layer made from a semiconductor material having the formula AlP.sub.0.39+y Sb.sub.0.61-y.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.