All-silicon monolithic motion sensor with integrated conditioning circuit
US5721162A · kind A · utility
26Cited by
10References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 3, 1995 |
| Grant date | Feb 24, 1998 |
| Priority date | — |
| Expiry date | Nov 3, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01P15/0802
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A motion sensor including a sensing wafer with a bulk micromachined sensing element, and a capping wafer on which is formed the conditioning circuitry for the sensor. The sensing and capping wafers are configured such that, when bonded together, the capping wafer encloses the sensing element to form a monolithic sensor. The capping wafer is further configured to expose bond pads on the sensing wafer, and to enable singulation of the two-wafer stack into individual dies. Wire bonds can be made to both wafers, such that the sensor can be packaged in essentially any way desired.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.