Non-volatile-programmable bistable multivibrator, programmable by the source, for memory redundancy circuit
US5721706A · kind A · utility
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11Claims
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Key dates
| Filing date | Nov 21, 1996 |
| Grant date | Feb 24, 1998 |
| Priority date | — |
| Expiry date | Nov 21, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C29/78
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An electrically programmable, non-volatile memory that can be used for the storage of the defective addresses in a redundancy circuit of a main memory, using bistable type non-volatile cells. Each cell includes floating-gate transistors, one of which is programmed to make the cell bistable. The floating-gate transistor is programmed by the application of a high voltage, to the gate, an intermediate voltage to the source and a zero voltage or a high impedance state to the drain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.