Jean-Michel Mirabel
17Patents
5h-index
15Co-inventors
63Inventor score
Filing activity: Jan 30, 1995 → Aug 30, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5606523A | Non-volatile programmable bistable multivibrator in predefined initial state for memory redundancy circuit | Physics | 50 | Expired |
| US5592417A | Non-volatile programmable bistable multivibrator, programmable by the source, for memory redundancy circuit | Physics | 47 | Expired |
| US5561621A | Non-volatile programmable bistable multivibrator with reduced parasitics in reading mode notably for memory redundancy circuit | Physics | 8 | Expired |
| US7675106B2 | Non-volatile reprogrammable memory | Electricity | 6 | Active |
| US5675539A | Method and circuit for testing memories in integrated circuit form | Physics | 6 | Expired |
| US7242621B2 | Floating-gate MOS transistor with double control gate | Electricity | 4 | Expired |
| US6455386B1 | High and low voltage transistor manufacturing method | Electricity | 3 | Expired |
| US6829170B2 | Method of controlling an electronic non-volatile memory and associated device | Physics | 1 | Expired |
| US6156609A | EEPROM device manufacturing method | Electricity | 1 | Expired |
| US9691866B2 | Memory cell having a vertical selection gate formed in an FDSOI substrate | Electricity | 1 | Active |
| US9461129B2 | Memory cell having a vertical selection gate formed in an FDSOI substrate | Electricity | 0 | Active |
| US5737266A | Methods and apparatus for programming content-addressable memories using floating-gate memory cells | Physics | 0 | Expired |
| US8426973B2 | Integrated circuit of decreased size | Electricity | 0 | Active |
| US5677870A | Non-volatile programmable bistable multivibrator, programmable by the source, for the memory redundancy circuit | Physics | 0 | Expired |
| US5721706A | Non-volatile-programmable bistable multivibrator, programmable by the source, for memory redundancy circuit | Physics | 0 | Expired |
| US8995190B2 | Reducing the programming current for memory matrices | Physics | 0 | Active |
| US7183160B2 | Manufacturing process for a flash memory and flash memory thus produced | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.