Wiring forming method
US5723367A · kind A · utility
43Cited by
8References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 20, 1996 |
| Grant date | Mar 3, 1998 |
| Priority date | — |
| Expiry date | Feb 20, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53223
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A wiring forming method includes a step of forming an oxide film on a silicon substrate, a step of forming a connection hole whose aspect ratio is larger than 1 in the insulation film, a step of forming an Al wiring film on the entire surface by the bias sputtering method and heating the silicon substrate to cause Al wiring film to flow into and fill the connection hole, and a step of processing Al wiring film to form an Al wiring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.