Method for measuring the electrical potential in a semiconductor element
US5723981A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 25, 1996 |
| Grant date | Mar 3, 1998 |
| Priority date | — |
| Expiry date | Jun 25, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/854
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Measuring an electrical potential in a semiconductor element by applying one or more voltages over the semiconductor element, placing one or more conductors in contact with the semi-conductor element using a scanning proximity microscope, calibrating the contact force between the conductors and the semiconductor element and measuring an electrical potential in the semi-conductor element with at least one of the conductors while injecting a substantially zero current in the semiconductor element. To measure the electrical potential distribution within the semiconductor, the position of at least one of the conductors is changed and the electric potential re-measured.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.