Semiconductor device and method for fabricating the same
US5726089A · kind A · utility
3Cited by
10References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 27, 1995 |
| Grant date | Mar 10, 1998 |
| Priority date | — |
| Expiry date | Nov 27, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76286
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device having a bonded wafer structure capable of reducing crystal defect in a power element forming region thereof is disclosed A recess is formed in a control circuit element forming region of a first n- silicon substrate, then filled with a silicon oxide film and subjected to grinding and polishing to provide a mirror-surface. An n- epitaxial layer is formed on the surface of a second n+ silicon substrate, then the surface of the epitaxial layer is coupled to the surfaces of the silicon oxide film and second circuit region of the first substrate and heat-treated to be bonded thereto.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.