Method of chemically mechanically polishing an electronic component using a non-selective ammonium persulfate slurry
US5726099A · kind A · utility
17Cited by
18References
6Claims
0Family size
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Inventor
Key dates
| Filing date | Nov 7, 1995 |
| Grant date | Mar 10, 1998 |
| Priority date | — |
| Expiry date | Nov 7, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming metal patterns in an insulating layer on a semiconductor wafer. After Chem-Mech Polishing (CMP) the insulating layer and forming studs in a planarized insulating layer, the polished surface is chem-mech polished with a touch-up slurry. The touch-up slurry has a nearly identical removal rate for the stud material (tungsten or titanium) as for the insulating material (SiO.sub.2). The preferred non-selective slurry is fumed colloidal silica, 8% by weight, and 20 g/l ammonium persulfate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.