GE-SI SOI MOS transistor and method of fabricating same

US5726459A · kind A · utility

Assignees

• Sharp Microelectronics Technology Inc. · US
• SHARP KABUSHIKI KAISHA · JP

Inventors

• Sheng Teng Hsu · Camas, US
• Tatsuo Nakato · Vancouver, US

Key dates

• Filing date: Jun 10, 1994
• Grant date: Mar 10, 1998
• Expiry date: Jun 10, 2014

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6715

Abstract

A Ge--Si MOS transistor for high speed, high density applications in which a thin layer of silicon (Si) is doped to have a concentration of germanium (Ge) ions which is preferably between 10 and 30%. The germanium doped silicon is formed on a layer or substrate of insulator. Optional silicidation of the drain and source regions improves conductivity therein and the use of shallow SIMOX processing technologies results in a more cost-effective and rapid fabrication process.