Field effect controlled semiconductor component with integrated resistance therein

US5726474A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Gerhard Miller · Landsberg am Lech, DE
• Thomas Laska · Birkenfeld, DE
• Alfred Porst · Munich, DE

Key dates

• Filing date: Mar 19, 1996
• Grant date: Mar 10, 1998
• Expiry date: Mar 19, 2016

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/13091

Abstract

A semiconductor body is covered by a polysilicon layer having a gate electrode and a contact surface for fastening a gate lead. An integrated ohmic resistor connects the gate electrode to the contact surface.