Thomas Laska
11Patents
5h-index
33Co-inventors
66Inventor score
Filing activity: Mar 19, 1996 → Sep 20, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6309920A | Bipolar transistor which can be controlled by field effect and method for producing the same | Electricity | 88 | Expired |
| US5726474A | Field effect controlled semiconductor component with integrated resistance therein | Electricity | 16 | Expired |
| US6309965A | Method of producing a semiconductor body with metallization on the back side that includes a titanium nitride layer to reduce warping | Electricity | 11 | Expired |
| US6147403A | Semiconductor body with metallizing on the back side | Electricity | 9 | Expired |
| US7709887B2 | Semiconductor component and method | Electricity | 5 | Active |
| US7005761B2 | Circuit configuration for off-load switching, switch mode power supply, clocked supply, voltage regulator, lamp switch, and methods for operating the circuit configuration | Electricity | 3 | Expired |
| US7709938B2 | Arrangement for electrically connecting semiconductor circuit arrangements to an external contact device and method for producing the same | Electricity | 3 | Active |
| US7851913B2 | Semiconductor device including a power device with first metal layer and second metal layer laterally spaced apart | Electricity | 3 | Active |
| US10475743B2 | Semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor device | Electricity | 0 | Active |
| US8030744B2 | Arrangement for electrically connecting semiconductor circuit arrangements to an external contact device and method for producing the same | Electricity | 0 | Active |
| US10777506B2 | Silicon carbide semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.