Semiconductor device having an improved thin film transistor
US5726487A · kind A · utility
12Cited by
6References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 28, 1994 |
| Grant date | Mar 10, 1998 |
| Priority date | — |
| Expiry date | Oct 28, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/031
Abstract
The present invention is directed to a thin film transistor (TFT) structure having a channel region formed of a crystallized SiGe and is to provide a thin film transistor having a large carrier mobility. In this case, a channel region (4) is formed of a crystallized SiGe thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.