Method for forming a film by selective area MOCVD growth
US5728215A · kind A · utility
15Cited by
4References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 14, 1995 |
| Grant date | Mar 17, 1998 |
| Priority date | — |
| Expiry date | Nov 14, 2015 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/042
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for forming a film by selective area growth by MDCVD technique includes forming a mask on a semiconductor substrate having a (100) plane, the mask having a mask opening to selectively growing a compound semiconductor layer, and a slit which is narrower than the mask opening in width and controls the growth rate of the compound semiconductor layer at the mask opening; and selectively growing the compound semiconductor layer at a growth rate which is on the mask in the mask opening and the slit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.