Reactant gas ejector head and thin-film vapor deposition apparatus
US5728223A · kind A · utility
583Cited by
7References
28Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 10, 1996 |
| Grant date | Mar 17, 1998 |
| Priority date | — |
| Expiry date | Jun 10, 2016 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/14
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A reactant gas ejector head in a thin-film vapor deposition apparatus includes at least two reactant gas inlet passages for introducing reactant gases, a gas mixing chamber for mixing reactant gases introduced from the reactant gas inlet passages, and a nozzle disposed downstream of the gas mixing chamber for rectifying the mixed gases from the gas mixing chamber into a uniform flow and applying the uniform flow to a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.