Method for chemical vapor deposition of semiconductor films by separate feeding of source gases and growing of films
US5728425A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 9, 1993 |
| Grant date | Mar 17, 1998 |
| Priority date | — |
| Expiry date | Mar 9, 2013 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/48
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method and apparatus in which separate steps are used between feeding source gases and growing films in a process of chemical vapor deposition (CVD) for compound semiconductor films. In one embodiment, a CVD reactor chamber has a piston which can change the volume of the chamber to control the pressure of the source gases therein. After source gases are fed to the chamber having a substrate under the condition that no CVD takes place due to an insufficient vapor pressure, the chamber is kept closed for a few seconds, and then pressurized by the piston to start CVD. A typical result indicates that a Hg.sub.1-x Cd.sub.x Te (where x=0.2) film on a 3-inch CdTe wafer has only 1% (or .DELTA.x=0.002) inhomogeneity in composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.