Method for fabricating a thin film transistor matrix device
US5728592A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 6, 1995 |
| Grant date | Mar 17, 1998 |
| Priority date | — |
| Expiry date | Jul 6, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6729
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A thin film transistor matrix device is fabricated by forming a transparent conductor film and a metal film on an insulating substrate in this order. The metal film and the transparent conductor film are together patterned to form picture element electrodes, and drain bus lines or gate bus lines. Source electrodes and drain electrodes may also be formed from the transparent conductor film and metal film. A semiconductor layer, an insulating film and a conductor film may be formed on the entire surface in this order. In this case, the conductor film, the insulator film and the semiconductor layer are patterned to form an active layer from the semiconductor layer, gate insulating films from the insulating film, and gate electrodes and gate bus lines from the conductor film. By patterning the conductor film, the insulating film and the semiconductor layer, the metal film of the picture element electrodes and drain bus lines is exposed. Alternatively, the metal film may be patterned with the semiconductor layer, insulating film and conductor film to expose the transparent conductor film. A current is applied to the drain bus lines or gate bus lines in an electrolyte solution to selecti…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.