Insulated gate field effect transistor structure having a unilateral source extension
US5731612A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 1997 |
| Grant date | Mar 24, 1998 |
| Priority date | — |
| Expiry date | Apr 28, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/371
Abstract
An insulated gate field effect transistor (IGFET) structure (10) includes a source region (14) and a drain region (16) formed in an impurity well (13). A channel region (18) separates the source region (14) from the drain region (16). In one embodiment, a unilateral extension region (17) is formed adjacent the source region (14) only and extends into the channel region (18). The unilateral extension region (17) has a peak dopant concentration at a depth (23) and a lateral distance (24) to provide punchthrough resistance. The IGFET structure (10) is suitable for low (i.e., 0.2-0.3 volts) to medium (0.5-0.6 volts) threshold voltage reduced channel length applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.