Diann Dow
12Patents
10h-index
22Co-inventors
68Inventor score
Filing activity: Apr 4, 1994 → May 2, 2005
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5963818A | Combined trench isolation and inlaid process for integrated circuit formation | Electricity | 41 | Expired |
| US5482878A | Method for fabricating insulated gate field effect transistor having subthreshold swing | Electricity | 40 | Expired |
| US5427964A | Insulated gate field effect transistor and method for fabricating | Electricity | 40 | Expired |
| US5541132A | Insulated gate semiconductor device and method of manufacture | Emerging Cross-Sectional Technologies | 32 | Expired |
| US5716866A | Method of forming a semiconductor device | Electricity | 27 | Expired |
| US5675166A | FET with stable threshold voltage and method of manufacturing the same | Electricity | 27 | Expired |
| US6017798A | FET with stable threshold voltage and method of manufacturing the same | Electricity | 17 | Expired |
| US7098509B2 | High energy ESD structure and method | Electricity | 15 | Expired |
| US5818098A | Semiconductor device having a pedestal | Electricity | 10 | Expired |
| US6033231A | Semiconductor device having a pedestal and method of forming | Electricity | 10 | Expired |
| US5731612A | Insulated gate field effect transistor structure having a unilateral source extension | Electricity | 8 | Expired |
| US7638385B2 | Method of forming a semiconductor device and structure therefor | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.