Semiconductor device having element with high breakdown voltage
US5731628A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Aug 22, 1996 |
| Grant date | Mar 24, 1998 |
| Priority date | — |
| Expiry date | Aug 22, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device which contains an electrode or an interconnection subjected to a high voltage prevents current leakage due to polarization of a mold resin. In this semiconductor device, a glass coat film 13a covering a semiconductor element has an electrical conductivity in a range defined by the following formula (1) under the conditions of temperature between 17.degree. C. and 145.degree. C.: EQU conductivity.gtoreq.1.times.10.sup.-10 /E . . . (1) PA1 (E: an electric field intensity V/cm!, E.gtoreq.2.times.10.sup.4 V/cm!) Owing to employment of the electrically conductive glass coat film, an electron current flowing through the conductive glass coat film suppresses an electric field caused by polarization of a mold resin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.