Semiconductor device
US5731637A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 25, 1996 |
| Grant date | Mar 24, 1998 |
| Priority date | — |
| Expiry date | Jul 25, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/141
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The object of the present invention is to provide a method of manufacturing high-performance, high-breakdown-voltage semiconductor devices which suppresses an increase in the junction leakage current due to heavy metal contamination without increasing the number of manufacturing steps. A method of manufacturing semiconductor devices according to the invention, comprises the steps of ion-implanting one or more elements selected from a group of silicon, carbon, nitrogen, oxygen, hydrogen, argon, helium, and xenon into at least one surface of a semiconductor substrate of a first conductivity type at a dose of 1.times.10.sup.15 cm.sup.-2 or more to form a distortion layer, oxidizing the surface of the substrate to form an oxide film, ion-implanting impurities of a second conductivity type at a low concentration (a dose of less than 1.times.10.sup.15 cm.sup.-2) via the oxide film into the one surface of the substrate, ion-implanting impurities of the second conductivity type at a high concentration (a dose of 1.times.10.sup.15 cm.sup.-2 or more) via the oxide film into the other surface of the substrate, and forming a junction by heat treatment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.