Memory cell structure in a magnetic random access memory and a method for fabricating thereof
US5732016A · kind A · utility
132Cited by
5References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 2, 1996 |
| Grant date | Mar 24, 1998 |
| Priority date | — |
| Expiry date | Jul 2, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic random access memory (MRAM) cell structure (10) with a portion of giant magnetoresistive (GMR) material (11), around which single or multiple word line (12) is wound, is provided. Magnetic field generated by word current (13, 14) superimposed in portion of GMR material (11) so that a total strength of magnetic field increases proportionally. The same word current is passed through the portion of GMR material (11) multiple times, thus producing equivalent word field by many times as large word current in a conventional MRAM cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.