Eugene Chen
75Patents
37h-index
57Co-inventors
91Inventor score
Filing activity: Nov 6, 1995 → Oct 13, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5966323A | Low switching field magnetoresistive tunneling junction for high density arrays | Physics | 186 | Expired |
| US6016269A | Quantum random address memory with magnetic readout and/or nano-memory elements | Physics | 158 | Expired |
| US7430135B2 | Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current density | Physics | 157 | Active |
| US7272034B1 | Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells | Physics | 156 | Expired |
| US5940319A | Magnetic random access memory and fabricating method thereof | Electricity | 154 | Expired |
| US6233172A | Magnetic element with dual magnetic states and fabrication method thereof | Electricity | 153 | Expired |
| US6211090A | Method of fabricating flux concentrating layer for use with magnetoresistive random access memories | Performing Operations; Transporting | 153 | Expired |
| US7272035B1 | Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells | Physics | 152 | Expired |
| US7379327B2 | Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells having enhanced read and write margins | Physics | 143 | Active |
| US7345912B2 | Method and system for providing a magnetic memory structure utilizing spin transfer | Physics | 141 | Active |
| US6292389A | Magnetic element with improved field response and fabricating method thereof | Electricity | 140 | Expired |
| US7286395B2 | Current driven switched magnetic storage cells having improved read and write margins and magnetic memories using such cells | Physics | 138 | Expired |
| US7515457B2 | Current driven memory cells having enhanced current and enhanced current symmetry | Physics | 137 | Active |
| US5861328A | Method of fabricating GMR devices | Electricity | 136 | Expired |
| US6835423B2 | Method of fabricating a magnetic element with insulating veils | Emerging Cross-Sectional Technologies | 134 | Expired |
| US5732016A | Memory cell structure in a magnetic random access memory and a method for fabricating thereof | Electricity | 132 | Expired |
| US6174737A | Magnetic random access memory and fabricating method thereof | Electricity | 125 | Expired |
| US6376260B1 | Magnetic element with improved field response and fabricating method thereof | Electricity | 117 | Expired |
| US6469926B1 | Magnetic element with an improved magnetoresistance ratio and fabricating method thereof | Physics | 111 | Expired |
| US7489541B2 | Spin-transfer switching magnetic elements using ferrimagnets and magnetic memories using the magnetic elements | Electricity | 101 | Expired |
| US6165803A | Magnetic random access memory and fabricating method thereof | Electricity | 99 | Expired |
| US5902690A | Stray magnetic shielding for a non-volatile MRAM | Emerging Cross-Sectional Technologies | 91 | Expired |
| US6153443A | Method of fabricating a magnetic random access memory | Electricity | 86 | Expired |
| US5659499A | Magnetic memory and method therefor | Physics | 80 | Expired |
| US5917749A | MRAM cell requiring low switching field | Physics | 68 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.