Buffered substrate for semiconductor devices
US5733641A · kind A · utility
44Cited by
6References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 31, 1996 |
| Grant date | Mar 31, 1998 |
| Priority date | — |
| Expiry date | May 31, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/265
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides a buffered substrate that includes a substrate, a buffer layer and a silicon layer. The buffer layer is disposed between the substrate and the silicon layer. The buffer layer has a melting point higher than a melting point of the substrate. A polycrystalline silicon layer is formed by crystallizing the silicon layer using a laser beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.