Ping Mei
101Patents
22h-index
79Co-inventors
93Inventor score
Filing activity: Jun 7, 1993 → Jun 28, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6365429B1 | Method for nitride based laser diode with growth substrate removed using an intermediate substrate | Electricity | 181 | Expired |
| US6448102B1 | Method for nitride based laser diode with growth substrate removed | Electricity | 108 | Expired |
| US6757314B2 | Structure for nitride based laser diode with growth substrate removed | Electricity | 80 | Expired |
| US5366926A | Low temperature process for laser dehydrogenation and crystallization of amorphous silicon | Emerging Cross-Sectional Technologies | 79 | Expired |
| US6599796B2 | Apparatus and fabrication process to reduce crosstalk in pirm memory array | Electricity | 54 | Expired |
| US5733641A | Buffered substrate for semiconductor devices | Emerging Cross-Sectional Technologies | 44 | Expired |
| US6653030B2 | Optical-mechanical feature fabrication during manufacture of semiconductors and other micro-devices and nano-devices that include micron and sub-micron features | Electricity | 43 | Expired |
| US6504175B1 | Hybrid polycrystalline and amorphous silicon structures on a shared substrate | Electricity | 42 | Expired |
| US6887792B2 | Embossed mask lithography | Emerging Cross-Sectional Technologies | 41 | Expired |
| US6288435A | Continuous amorphous silicon layer sensors using doped poly-silicon back contact | Emerging Cross-Sectional Technologies | 41 | Expired |
| US6011531A | Methods and applications of combining pixels to the gate and data lines for 2-D imaging and display arrays | Physics | 39 | Expired |
| US6019796A | Method of manufacturing a thin film transistor with reduced parasitic capacitance and reduced feed-through voltage | Emerging Cross-Sectional Technologies | 39 | Expired |
| US6140668A | Silicon structures having an absorption layer | Electricity | 36 | Expired |
| US6844214B1 | Microelectromechanical system based sensors, sensor arrays, sensing systems, sensing methods and methods of fabrication | Electricity | 33 | Expired |
| US6690597B1 | Multi-bit PROM memory cell | Physics | 32 | Expired |
| US6236831A | Method and apparatus of recycling office paper | Performing Operations; Transporting | 30 | Expired |
| US7202179B2 | Method of forming at least one thin film device | Electricity | 29 | Expired |
| US7056834B2 | Forming a plurality of thin-film devices using imprint lithography | Electricity | 26 | Expired |
| US5871826A | Proximity laser doping technique for electronic materials | Electricity | 26 | Expired |
| US6288417A | Light-emitting devices including polycrystalline gan layers and method of forming devices | Electricity | 26 | Expired |
| US6818535B2 | Thin phosphorus nitride film as an n-type doping source used in a laser doping technology | Electricity | 26 | Expired |
| US6848175B2 | Method of forming an out-of-plane structure | Emerging Cross-Sectional Technologies | 23 | Expired |
| US6861365B2 | Method and system for forming a semiconductor device | Electricity | 22 | Expired |
| US6107641A | Thin film transistor with reduced parasitic capacitance and reduced feed-through voltage | Emerging Cross-Sectional Technologies | 21 | Expired |
| US6300648A | Continuous amorphous silicon layer sensors using sealed metal back contact | Electricity | 20 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.