Method of manufacturing MOS type semiconductor device of vertical structure
US5733810A · kind A · utility
26Cited by
3References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 19, 1997 |
| Grant date | Mar 31, 1998 |
| Priority date | — |
| Expiry date | Mar 19, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
A groove is formed on a semiconductor substrate. A mask material layer is so formed on the surface of the semiconductor substrate as to open a groove region. With the mask material layer used as a mask, a semiconductor layer is selectively formed on the semiconductor substrate exposed with the inner wall surface of the groove. Then, the mask material layer is removed. An insulating film is formed on the semiconductor layer formed on the inner wall surface of the groove and the surface of the semiconductor substrate. The groove is buried with a conductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.