Method for forming planarized field isolation regions
US5733813A · kind A · utility
15Cited by
3References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 9, 1996 |
| Grant date | Mar 31, 1998 |
| Priority date | — |
| Expiry date | May 9, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76213
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Planarized field isolation regions are formed in a semiconductor substrate to isolate adjacent semiconductor devices by implanting an isolation material, such as oxygen or nitrogen ions, into a substrate patterned to define the field isolation regions. The implanted isolation material combines with the silicon in the substrate to form a field isolation region that extends downward from the surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.