Low profile semiconductor device with like-sized chip and mounting substrate
US5734201A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 21, 1994 |
| Grant date | Mar 31, 1998 |
| Priority date | — |
| Expiry date | Oct 21, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/351
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A low profile semiconductor device (24) is manufactured by mounting a semiconductor die (26) onto a substrate (28) using an interposer (30). The interposer couples an active surface (32) of the die (26) to conductive traces (33) on the top surface of the substrate. The interposer is directionally conductive so that electrical conductivity is limited to the z-direction through thickness of the interposer. The interposer both affixes the die to the substrate and provides the first level of interconnects for the device. The inactive surface (36) of the die can be exposed for efficient thermal dissipation. An optional heat spreader (50) may be added for increased thermal management. The device may be overmolded, glob-topped, capped, or unencapsulated. Separate die-attach and wire bonding processes are eliminated. A second level of interconnects are provided by either solder balls (38), solder columns (44), or pins (64).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.