Semiconductor device, semiconductor laser, and high electron mobility transistor
US5734670A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 15, 1996 |
| Grant date | Mar 31, 1998 |
| Priority date | — |
| Expiry date | Apr 15, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34326
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor device includes a semiconductor substrate having a surface; and a strained superlattice structure including first semiconductor layers having a first strain in a direction with respect to the semiconductor substrate and second semiconductor layers having a second strain in the same direction as and different in magnitude from the first strain, the first semiconductor layers and the second semiconductor layers being alternatingly laminated. The difference in strains between the first semiconductor layers and the second semiconductor layers is reduced, so that the crystalline quality of the strained superlattice structure is improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.