Method for producing at least two transsistors in a semiconductor body
US5736445A · kind A · utility
14Cited by
5References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 18, 1996 |
| Grant date | Apr 7, 1998 |
| Priority date | — |
| Expiry date | Jul 18, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing at least two transistors in one semiconductor body includes placing a first well doping region for receiving a first transistor and a second well doping region serving as a charge carrier sink region for a second transistor into a semiconductor body by masked doping with ensuing heat treatment. A mask for forming the second well doping region includes regions being permeable to a dopant and regions being impermeable to the dopant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.