Integrated circuit device with inductor incorporated therein
US5736749A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 19, 1996 |
| Grant date | Apr 7, 1998 |
| Priority date | — |
| Expiry date | Nov 19, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is directed to a semiconductor device formed on a silicon substrate that has at least one inductor integrated therewith. The inductor is formed on a region of porous silicon formed in the substrate. The porous silicon reduces the capacitive and inductive coupling of the inductor to the substrate. Therefore, the integrated inductors of the present invention are capable of having a higher inductance at higher resonance frequencies (i.e. 2 GHz or greater) than conventional inductors. Devices with inductors that operate at these frequencies are desirable for wireless applications. The present invention is also directed to a process for fabricating the device in which the porous silicon is formed using an annodization technique, and wherein the porous silicon so formed is maintained in an essentially unoxidized state throughout the remainder of the process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.