Semiconductor device including a CMOSFET of a single-gate
US5736767A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 2, 1996 |
| Grant date | Apr 7, 1998 |
| Priority date | — |
| Expiry date | Jul 2, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/637
Abstract
A semiconductor device including a CMOSFET having first and second channel type MOSFETs, respectively formed in a first semiconductor region of a first conductivity type and in a second semiconductor region of a second conductivity type. The first channel type MOSFET has a first gate electrode insulatively formed on the first region, made of a first conductivity type semiconductor, and having a gate length of 0.2 .mu.m or less, first source/drain regions of the second conductivity type respectively formed in the first region and having a LDD structure, and a buried channel region of the second conductivity type formed just below the first gate electrode. The second channel type MOSFET has a second gate electrode insulatively formed on the second region, made of a first conductivity type semiconductor, and having a gate length of 0.2 .mu.m or less, second source/drain regions of the first conductivity type respectively formed in the second region and having a LDD structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.