Takashi Yoshitomi
49Patents
11h-index
43Co-inventors
75Inventor score
Filing activity: Mar 13, 1992 → Feb 12, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5990516A | MOSFET with a thin gate insulating film | Electricity | 37 | Expired |
| US5434440A | Semiconductor device and method of manufacturing the same | Emerging Cross-Sectional Technologies | 27 | Expired |
| US5511201A | Data processing apparatus, power supply controller and display unit | Physics | 20 | Expired |
| US5898203A | Semiconductor device having solid phase diffusion sources | Emerging Cross-Sectional Technologies | 18 | Expired |
| US6740974B2 | Semiconductor device having capacitors provided with protective insulating film | Electricity | 16 | Expired |
| US5698881A | MOSFET with solid phase diffusion source | Electricity | 14 | Expired |
| US5903027A | MOSFET with solid phase diffusion source | Electricity | 14 | Expired |
| US10074840B2 | Separator for non-aqueous secondary battery and non-aqueous secondary battery | Emerging Cross-Sectional Technologies | 13 | Active |
| US6075266A | Semiconductor device having MIS transistors and capacitor | Electricity | 13 | Expired |
| US6894331B2 | MIM capacitor having flat diffusion prevention films | Electricity | 11 | Expired |
| US6569987B1 | Process for producing meta-aromatic polyamide fiber | Textiles; Paper | 11 | Expired |
| US6229164A | MOSFET with a thin gate insulating film | Electricity | 9 | Expired |
| US6617666B2 | Semiconductor device with capacitor and process for manufacturing the device | Emerging Cross-Sectional Technologies | 8 | Expired |
| US6410952B1 | MOSFET with a thin gate insulating film | Electricity | 7 | Expired |
| US5780901A | Semiconductor device with side wall conductor film | Emerging Cross-Sectional Technologies | 7 | Expired |
| US5736767A | Semiconductor device including a CMOSFET of a single-gate | Electricity | 5 | Expired |
| US6998663B2 | Semiconductor device having capacitor and method of manufacturing the same | Electricity | 4 | Expired |
| US5955761A | Semiconductor device and manufacturing method thereof | Emerging Cross-Sectional Technologies | 4 | Expired |
| US6746929B2 | Semiconductor device having capacitor and method of manufacturing the same | Electricity | 3 | Expired |
| US6864137B2 | MIM capacitor with diffusion barrier | Emerging Cross-Sectional Technologies | 3 | Expired |
| US7976987B2 | Separator for nonaqueous secondary battery, method for producing the same, and nonaqueous secondary battery | Emerging Cross-Sectional Technologies | 3 | Active |
| US6642560B2 | MOSFET with a thin gate insulating film | Electricity | 3 | Expired |
| US8597816B2 | Separator for nonaqueous secondary battery, method for producing the same, and nonaqueous secondary battery | Emerging Cross-Sectional Technologies | 3 | Active |
| US5766965A | Semiconductor device and method of manufacturing the same | Emerging Cross-Sectional Technologies | 2 | Expired |
| US9029002B2 | Separator for nonaqueous secondary battery, method for producing the same, and nonaqueous secondary battery | Emerging Cross-Sectional Technologies | 2 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.