Semiconductor laser having multi-quantum barrier including complex barrier structure and method of making the semiconductor laser
US5737350A · kind A · utility
18Cited by
7References
17Claims
0Family size
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Key dates
| Filing date | Sep 18, 1995 |
| Grant date | Apr 7, 1998 |
| Priority date | — |
| Expiry date | Sep 18, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34313
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A multi-quantum barrier layer includes alternatingly laminated barrier layers of a III-V compound semiconductor material and well layers of a III-V compound semiconductor material including the same Group V element as in the barrier layers. During the formation of the multi-quantum barrier layer it is not necessary to switch the Group V element source gas at the interface between a barrier layer and a well layer so that this interface is abrupt, improving the electron reflection efficiency of the multi-quantum barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.