Fidelity enhancement of lithographic and reactive-ion-etched images by optical proximity correction
US5740068A · kind A · utility
250Cited by
20References
23Claims
0Family size
Assignee
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Key dates
| Filing date | May 30, 1996 |
| Grant date | Apr 14, 1998 |
| Priority date | — |
| Expiry date | May 30, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for performing optical proximity correction is disclosed that not only limits the optical proximity correction to electrically relevant structures, but also improves the accuracy of the corrections by processing individual feature edges, and minimizes the mask manufacturing impacts by avoiding the introduction of jogs into the design. Critical edge regions of the relevant electrical structures are analyzed, sorted and manipulated to receive optical proximity corrections.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.