Semiconductor laser
US5740192A · kind A · utility
51Cited by
1References
22Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 17, 1996 |
| Grant date | Apr 14, 1998 |
| Priority date | — |
| Expiry date | Dec 17, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2302/00
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser exhibiting an oscillation wavelength of 450 nm or less and comprising a substrate, a lower clad layer formed on or above the substrate and mainly composed of a III-V Group compound semiconductor, an active layer formed directly on the lower clad layer and mainly composed of a III-V Group compound semiconductor, and an upper p-type clad layer formed directly on the active layer and mainly composed of a III-V Group compound semiconductor. This semiconductor laser is characterized in that the upper p-type clad layer contains Mg, Si and at least one impurities for compensating residual donors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.