Stable FET with shielding region in the substrate
US5742082A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 22, 1996 |
| Grant date | Apr 21, 1998 |
| Priority date | — |
| Expiry date | Nov 22, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/357
Abstract
A stable FET including a substrate structure with a doped layer formed as a portion of the substrate structure and defining an electrically conductive shielding region adjacent a surface of the substrate structure. A channel region is positioned on the shielding region and includes a plurality of epitaxial layers grown on the surface of the substrate structure in overlying relationship to the doped layer. A drain and a source are positioned on the channel region in spaced relationship from each other with a gate positioned in overlying relationship on the channel region between the drain and source. An externally accessible electrical contact is connected to the shielding region and to the source region to provide a path for the removal of internally generated charges, such as holes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.