Marino J. Martinez
11Patents
7h-index
21Co-inventors
62Inventor score
Filing activity: Mar 17, 1992 → Jun 25, 2002
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6893947B2 | Advanced RF enhancement-mode FETs with improved gate properties | Electricity | 123 | Expired |
| US6521961B1 | Semiconductor device using a barrier layer between the gate electrode and substrate and method therefor | Electricity | 43 | Expired |
| US6023086A | Semiconductor transistor with stabilizing gate electrode | Electricity | 29 | Expired |
| US5742082A | Stable FET with shielding region in the substrate | Electricity | 23 | Expired |
| US5192698A | Making staggered complementary heterostructure FET | Emerging Cross-Sectional Technologies | 16 | Expired |
| US5945694A | Compound semiconductor device having reduced temperature variability | Electricity | 11 | Expired |
| US6528405B1 | Enhancement mode RF device and fabrication method | Electricity | 9 | Expired |
| US5719088A | Method of fabricating semiconductor devices with a passivated surface | Electricity | 7 | Expired |
| US5688703A | Method of manufacturing a gate structure for a metal semiconductor field effect transistor | Emerging Cross-Sectional Technologies | 6 | Expired |
| US5733827A | Method of fabricating semiconductor devices with a passivated surface | Electricity | 6 | Expired |
| US5830774A | Method for forming a metal pattern on a substrate | Electricity | 6 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.