High power MOSFET with low on-resistance and high breakdown voltage
US5742087A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 26, 1995 |
| Grant date | Apr 21, 1998 |
| Priority date | — |
| Expiry date | Oct 26, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
A high power MOSFET is disclosed in which two laterally spaced sources each supply current through respective channels in one surface of a semiconductor chip which are controlled by the same gate. The channels lead from the source electrodes to a relatively low resistivity epitaxially formed region which is deposited on a high conductivity substrate. The epitaxially deposited semiconductor material immediately adjacent and beneath the gate and in the path from the sources to the drain has a relatively high conductivity, thereby to substantially reduce the on-resistance of the device without effecting the breakdown voltage of the device. The breakdown voltage of the device is substantially increased by forming a relatively deep p-type diffusion with a large radius in the n-type epitaxial layer beneath each of the sources.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.