Semiconductor device having a passive device formed over one or more deep trenches
US5742091A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 24, 1997 |
| Grant date | Apr 21, 1998 |
| Priority date | — |
| Expiry date | Jan 24, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes at least one passive device and is configured such that parasitic capacitances associated with the passive device are minimized. A substrate layer of the semiconductor device is formed of a substrate material characterized by a first dielectric constant. The substrate layer has at least one deep trench formed therein, and the deep trench is filled with a trench fill material characterized by a second, effective, dielectric constant that is lower than the first dielectric constant. A field layer is formed on a surface of the substrate layer over the deep trench. Finally, the passive device is formed on a surface of the field layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.