Method for fabricating semiconductor device
US5744012A · kind A · utility
2Cited by
3References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 12, 1996 |
| Grant date | Apr 28, 1998 |
| Priority date | — |
| Expiry date | Nov 12, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02071
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device wherein a plasma reaction is used to dry etch a film, comprising injection of anions onto the film to neutralize cations remaining on the film after the plasma etch, whereby the reliability in highly integrated semiconductor devices can be secured.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.