Method of manufacturing vertical MOSFET

US5747371A · kind A · utility

Assignee

• Motorola, Inc. · US

Inventors

• Francine Y. Robb · Tempe, US
• Stephen P. Robb · Fountain Hills, US
• Jean-Michel Reynes · Pompertuzat, FR
• Li-Hsin Chang · Taichung, TW

Key dates

• Filing date: Jul 22, 1996
• Grant date: May 5, 1998
• Expiry date: Jul 22, 2016

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/904

Abstract

A semiconductor device includes a substrate (11), a first region (21) in the substrate (11) wherein the first region (21) has a first conductivity type, a second region (22) in the substrate (11) wherein the second region (22) is adjacent to the first region (21) and wherein the second region (22) has a second conductivity type different from the first conductivity type, and a third region (24) in the substrate (11) wherein the third region (24) overlaps the first and second regions (21, 22) and wherein the third region (24) has a damaged crystalline structure.