SIC field-effect transistor array with ring type trenches and method of producing them

US5747831A · kind A · utility

Assignee

• Daimler-Benz AG · DE

Inventors

• Werner Loose · Bad Liebenzell, DE
• Jacek Korec · San Jose, US
• Ekkehard Niemann · Maintal, DE
• Alfred Boos · Mainz, DE

Key dates

• Filing date: Feb 28, 1996
• Grant date: May 5, 1998
• Expiry date: Feb 28, 2016

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/411

Abstract

SiC field-effect transistors with source, gate and drain contacts and in which the source contacts are located on the surface of the semiconductor wafer, the drain contacts on the underside of the wafer and the gate contacts in trench-like structures. The trench-like structures surround the source electrodes of the transistors in the shape of a ring and the gate contacts are connected to each other on the floors of the trenches.