Fast power diode
US5747872A · kind A · utility
9Cited by
8References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 20, 1995 |
| Grant date | May 5, 1998 |
| Priority date | — |
| Expiry date | Jun 20, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A fast power diode with a soft switching-time response for use in a commutating branch containing a switchable semiconductor component is formed by at least three successive diffusions with p and n dopants and the heavy metal platinum, and for final incorporation of the parameters necessary for operation, the diode is irradiated with electrons.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.