Josef Lutz
34Patents
7h-index
29Co-inventors
69Inventor score
Filing activity: Oct 26, 1992 → Apr 22, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8526665B2 | Electro-acoustic transducer comprising a MEMS sensor | Electricity | 37 | Active |
| US7889877B2 | Device for generating a medium stream | Mechanical Engineering; Lighting; Heating | 24 | Expired |
| US8072010B2 | Membrane for a MEMS condenser microphone | Electricity | 21 | Active |
| US8233646B2 | Acoustic device and method of manufacturing same | Emerging Cross-Sectional Technologies | 17 | Active |
| US8284964B2 | Compound membrane, method of manufacturing the same, and acoustic device | Emerging Cross-Sectional Technologies | 10 | Active |
| US7696600B2 | IGBT device and related device having robustness under extreme conditions | Electricity | 9 | Active |
| US5747872A | Fast power diode | Electricity | 9 | Expired |
| US7635909B2 | Semiconductor diode and IGBT | Electricity | 7 | Expired |
| US8354709B2 | Semiconductor component with improved robustness | Electricity | 6 | Active |
| US7946378B2 | Membrane for an electroacoustic transducer | Electricity | 5 | Active |
| US7866439B2 | Membrane for an electroacoustic transducer | Electricity | 5 | Active |
| US7675108B2 | Method for producing a buried N-doped semiconductor zone in a semiconductor body and semiconductor component | Electricity | 4 | Expired |
| US5294843A | Freewheeling diode circuit | Electricity | 3 | Expired |
| US8476712B2 | Surge-current-resistant semiconductor diode with soft recovery behavior and methods for producing a semiconductor diode | Electricity | 3 | Active |
| US9070571B2 | Power switching module with reduced oscillation | Electricity | 3 | Active |
| US7696605B2 | Semiconductor component comprising a temporary field stopping area, and method for the production thereof | Electricity | 2 | Active |
| US7933429B2 | Vibrating element for an electroacoustic transducer | Emerging Cross-Sectional Technologies | 2 | Active |
| US8101506B2 | Method for producing a buried n-doped semiconductor zone in a semiconductor body and semiconductor component | Electricity | 2 | Active |
| US8396227B2 | Method of determining the harmonic and anharmonic portions of a response signal of a device | Electricity | 1 | Active |
| US10389262B2 | Device for temporarily taking over electrical current from an energy transfer or distribution device, when needed | Emerging Cross-Sectional Technologies | 1 | Active |
| US9064923B2 | Bipolar semiconductor component with a fully depletable channel zone | Electricity | 1 | Active |
| US10700168B2 | Wide band gap semiconductor device and a method for forming a wide band gap semiconductor device | Electricity | 1 | Active |
| US7256583B2 | Device and method for testing the seal tightness of a fuel tank system of a motor vehicle | Mechanical Engineering; Lighting; Heating | 0 | Expired |
| US11656163B2 | Method for measuring the vapor pressure of liquid and solid substances | Physics | 0 | Active |
| US8594348B2 | Asymmetrical moving systems for a piezoelectric speaker and asymmetrical speaker | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.