Semiconductor device, method of fabricating the same and copper leads
US5747881A · kind A · utility
37Cited by
2References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 30, 1996 |
| Grant date | May 5, 1998 |
| Priority date | — |
| Expiry date | Jan 30, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/01322
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprises a semiconductor chip, an Au bump formed on the semiconductor chip, and Cu lead bonded to the Au bump through a bonding part. The Cu lead has a Cu core and a plated Sn layer formed on the Cu core, and the bonding part is formed of an Au--rich Au--Cu--Sn alloy of a ternary system having a single-phase structure with a composition of 15 atomic % Sn or less and 25 atomic % Cu or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.