MOS gate driver integrated circuit for ballast circuits
US5747943A · kind A · utility
18Cited by
11References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 26, 1996 |
| Grant date | May 5, 1998 |
| Priority date | — |
| Expiry date | Aug 26, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S315/07
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A monolithic MOS gate driver chip is described for driving high side and low side power MOSFETs in a gas discharge lamp ballast circuit. The chip includes a timer circuit for generating a square output at the natural frequency of resonance of the lamp ballast. Dead time circuits are provided in the chip to prevent the simultaneous conduction of both high side and low side MOSFETs. The chip may be housed in an eight pin DIP package.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.