Integrated lateral detector and laser device and method of fabrication
US5748661A · kind A · utility
11Cited by
1References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 19, 1996 |
| Grant date | May 5, 1998 |
| Priority date | — |
| Expiry date | Jul 19, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/183
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of biasing a semiconductor laser to a threshold level including the step of providing a semiconductor laser, monitoring spontaneous emissions of the semiconductor laser, identifying a point at which the spontaneous emissions clamp, and employing feedback to maintain a threshold level, driven by the identification of the point at which the spontaneous emissions clamp.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.